Czochralski crystal growth process is currently the most commonly used method to grow single crystals for a wide range of materials as oxides, metals, semiconductors. The method allows the production of relatively large single crystal reproducing the same crystalline orientation of the seed.

The exact time and temperature depends on the material itself, on the amount of prior cold work, solute concentration, and type of the desired annealing treatment. The final shape and quality of the crystal is directly related to the process parameters and the reliability of the equipment.

This line of equipment offers a high precision control of all process parameters through a dedicated control software with continuous data plotting and recording, suitable for laboratories as well as R&D centers.

The Kyropoulos method is primarily used for growing large optical crystals, especially sapphire. A seed crystal is placed just below the surface of the molten material and slowly raised while carefully controlling the cooling rate. This technique minimizes thermal stress and internal defects, enabling the growth of massive, high-optical-quality crystals.

It is highly valued in laboratory and R&D environments for producing materials used in lasers, infrared optics, and high-strength transparent components.

In the Bridgman method, powdered or molten material is placed in a container (often a crucible) and slowly moved through a controlled temperature gradient. As the material cools and solidifies from one end to the other, a single crystal forms. This method offers excellent control over crystal orientation and is well suited for semiconductors, infrared detector materials, and specialized alloys.

It is widely used in research settings for its reliability and adaptability to different materials.