Features
Reactor technology
Water cooled metal chamber
RTP heating system
Crossed-lamp IR Technology
Temperature range
RT to 1200°C
Temperature uniformity (typical)
±1°C
Ramp rate
1°C/s to 200°C/s
Temperature control
TCs, Pyrometer & digital PID
Cooling
Fan & water-cooled reflector
Process
Atmospheric pressure or under vacuum (with the use of gas or not)
Substrate size
100, 200, 300 mm diameter
Options
- Primary vacuum pump, Secondary vacuum pump
- Susceptor
- Secondary vacuum configuration , Diffusion pump, Turbo pump, Cryogenic pump
- Spare chamber
- Hydrogen configuration
- Software-controlled, and stand-alone single chamber reactor
- Cold wall design for process reproducibility
- Multizone halogen lamp heater
- Gas introduction lines Up to 4 MFC-controlled
- Atmospheric and high vacuum process capabilities
- Solar Applications : Square chamber available for solar applications
- Qualification : Single-wafer RTP furnace for process engineering and qualification
- Lamp Technology : High-performance crossed lamp technology
- Gas introduction capability
Integration
Compatibility with Automation
APPLICATION
Rapid thermal process (RTP)
RTA
RTO
RTN
Crystallization
Densification
Selenization
Carbonization
INDUSTRY
SEMI
Optoelectronic
Microelectronics
MEMS
PV
MATERIAL
Silicon
Steel
Glass
III-V
II-VI