Features
Reactor technology
Water cooled metal chamber
RTP heating system
Crossed-lamp IR Technology
Temperature range
RT to 1000°C
Temperature uniformity (typical)
±1°C
Ramp rate
1°C/s to 200°C/s
Temperature control
TCs, Pyrometer & digital PID
Cooling
Fan & water-cooled reflector
Process
Atmospheric pressure or under vacuum (with the use of gas or not)
Substrate size
2-inch diameter (up to 50 mm diameter) and Maximum length of 150 mm
Options
- Primary vacuum, pump
- Susceptor
- Software-controlled stand-alone single chamber reactor
- Hot wall chamber design
- Microprocessor-controlled, thyristor technology
- Up to 2 MFC , controlled gas introduction lines
- Atmospheric and vacuum process capabilities
- PID temperature control through thermocouples
Integration
Compatibility with Automation
APPLICATION
Rapid thermal process (RTP)
RTA
RTO
RTN
Crystallization
Densification
INDUSTRY
SEMI
Optoelectronic
Microelectronics
MEMS
PV
MATERIAL
Silicon
Steel
Glass
III-V
II-VI