Features
Reactor technology
Stainless steel cold wall process chamber
RTP heating system
Crossed-lamp IR Technology
Temperature range
Up to 1250°C
Temperature uniformity (typical)
±1°C
Ramp rate
1°C/s to 250°C/s on 2-inch substrates
Temperature control
TCs & digital PID
Cooling rate
Up to 100°C/s
Process
Atmosphere to 10-6 Torr
Substrate size
Up to 3-inch wafers
Options
- Graphite and silicon carbide coated susceptor
- Rough vacuum pump & turbo pump
- Pyrometer temperature control
- Downstream pressure control with throttle valve
Integration
Compatibility with Automation
APPLICATION
Rapid thermal process (RTP)
RTA
RTO
RTN
Crystallization
Densification
Selenization
Carbonization
INDUSTRY
SEMI
Optoelectronic
Microelectronics
MEMS
PV
MATERIAL
Silicon
Steel
Glass
III-V
II-VI