Technical specifications
Process chamber
Stainless steel cold wall chamber technology
Temperature control
TCs & digital PID
RTP heating system
Crossed-lamp IR Technology
Cooling rate
Up to 100°C/s
Temperature range
Standard version : 1100°C
Option up to 1200°C
Process
Atmosphere to 10-6 Torr
Temperature uniformity (typical)
±1°C
Robotic integration
Compatibility with Automation & Robotics : with ECM Robotics
Ramp rate
1°C/s to 250°C/s on 2-inch substrates
Substrate size
Up to 150 mm diameter wafers or 6-inch by 6-inch square.
Small substrates using susceptors
Options
- Graphite and silicon carbide coated susceptor
- Rough vacuum pump & turbo pump
- Automatic pressure control with throttle valve
- Fast cooling system, Selenization kits
Applications
Selenization & Sulfurization
Rapid Thermal Oxidation (RTO)
Ohmic contact annealing
Densification & Crystallization
Industry
- Semiconductor
- Optoelectronic
- Microelectronics
- MEMS
- Photovoltaic
Material
- Silicon
- Steel
- Glass
- III-V
- II-VI