Technical specifications
Reactor technology
Water cooled metal chamber
Temperature control
TCs, Pyrometer & digital PID
RTP heating system
Crossed-lamp IR Technology
Cooling rate
Fan & water-cooled reflector
Temperature range
RT to 1000°C
Process
Atmospheric pressure or under vacuum (with the use of gas or not)
Temperature uniformity (typical)
±1°C
Robotic integration
Compatibility with Automation & Robotics : with ECM Robotics
Ramp rate
1°C/s to 200°C/s
Substrate size
2-inch diameter (up to 50 mm diameter) and Maximum length of 150 mm.
Options
- Primary vacuum, pump
- Susceptor
- Software-controlled stand-alone single chamber reactor
- Hot wall chamber design
- Microprocessor-controlled, thyristor technology
- Up to 2 MFC, controlled gas introduction lines
- Atmospheric and vacuum process capabilities
- PID temperature control through thermocouples
Applications
- Rapid Thermal Processing (RTP) & RTA
- Rapid Thermal Oxidation
- RTN
- Crystallization
- Densification
Industry
- Semiconductor
- Optoelectronic
- Microelectronics
- MEMS
- Photovoltaic
Material
- Silicon
- Steel
- Glass
- III-V
- II-VI