Features
Reactor technology
Water cooled metal chamber
RTP heating system
Crossed-lamp IR Technology
Temperature range
RT to 1000°C
Temperature uniformity (typical)
±1°C
Ramp rate
1°C/s to 200°C/s
Temperature control
TCs, Pyrometer & digital PID
Cooling
Fan & water-cooled reflector
Process
Atmospheric pressure or under vacuum (with the use of gas or not)
Substrate size
2-inch diameter (up to 50 mm diameter) and Maximum length of 150 mm
Options
- Primary vacuum, pump
- Susceptor
- Software-controlled stand-alone single chamber reactor
- Hot wall chamber design
- Microprocessor-controlled, thyristor technology
- Up to 2 MFC , controlled gas introduction lines
- Atmospheric and vacuum process capabilities
- PID temperature control through thermocouples
Integration
Compatibility with Automation
APPLICATION
Rapid thermal process (RTP)
RTA
Rapid Thermal Oxidation
RTN
Crystallization
Densification
INDUSTRY
SEMI
Optoelectronic
Microelectronics
MEMS
PV
MATERIAL
Silicon
Steel
Glass
III-V
II-VI