Features
Reactor technology
Water cooled metal chamber
RTP heating system
Crossed-lamp IR Technology
Temperature range
RT to 1200°C
Temperature uniformity (typical)
±1°C
Ramp rate
1°C/s to 200°C/s
Temperature control
TCs, Pyrometer & digital PID
Cooling
Fan & water-cooled reflector
Process
Atmospheric pressure or under vacuum (with the use of gas or not)
Substrate size
100, 200, 300 mm diameter
Options
- Primary vacuum pump, Secondary vacuum pump
- Susceptor
- Secondary vacuum configuration , Diffusion pump, Turbo pump, Cryogenic pump
- Spare chamber
- Hydrogen configuration
- Software-controlled, and stand-alone single chamber reactor
- Cold wall design for process reproducibility
- Multizone halogen lamp heater
- Gas introduction lines Up to 4 MFC-controlled
- Atmospheric and high vacuum process capabilities
- Solar Applications : Square chamber available for solar applications
- Qualification : Single-wafer RTP furnace for process engineering and qualification
- Lamp Technology : High-performance crossed lamp technology
- Gas introduction capability
Integration
Compatibility with Automation
APPLICATION
Rapid thermal process (RTP)
RTA
Rapid Thermal Oxidation
RTN
Crystallization
Densification
Selenization
Carbonization
INDUSTRY
SEMI
Optoelectronic
Microelectronics
MEMS
PV
MATERIAL
Silicon
Steel
Glass
III-V
II-VI