Technical specifications
Reactor technology
Water cooled metal chamber
Temperature control
TCs, Pyrometer & digital PID
RTP heating system
Crossed-lamp IR Technology
Cooling
Fan & Water-cooled reflector
Temperature range
RT to 1200°C
Process
Atmospheric pressure or under vacuum (with the use of gas or not)
Temperature uniformity (typical)
±1°C
Robotic integration
Compatibility with Automation & Robotics : with ECM Robotics
Ramp rate
1°C/s to 200°C/s
Substrate size
100, 200, 300 mm diameter
Options
- Primary vacuum pump, Secondary vacuum pump
- Susceptor
- Secondary vacuum configuration , Diffusion pump, Turbo pump, Cryogenic pump
- Spare chamber
- Hydrogen configuration
- Software-controlled, and stand-alone single chamber reactor
- Cold wall design for process reproducibility
- Multizone halogen lamp heater
- Gas introduction lines Up to 4 MFC-controlled
- Atmospheric and high vacuum process capabilities
- Solar Applications : Square chamber available for solar applications
- Qualification : Single-wafer RTP furnace for process engineering and qualification
- Lamp Technology : High-performance crossed lamp technology
- Gas introduction capability
Applications
- Rapid Thermal Processing
- RTA
- Rapid Thermal Oxidation
- RTN
- Crystallization
- Densification
- Selenization
- Carbonization
Industry
- Semiconductor
- Optoelectronic
- Microelectronics
- MEMS
- Photovoltaic
Material
- Silicon
- Steel
- Glass
- III-V
- II-VI