Features
Process Chamber
Stainless steel cold wall chamber technology
RTP heating system
Crossed-lamp IR Technology
Temperature range
Standard version : 1100°C
Option up to 1200°C
Temperature uniformity (typical)
±1°C
Ramp rate
1°C/s to 250°C/s on 2-inch substrates
Temperature control
TCs & digital PID
Cooling rate
Up to 100°C/s
Process
Atmosphere to 10-6 Torr
Substrate size
Up to 150 mm diameter wafers or 6-inch by 6-inch square
Small substrates using susceptors
Options
- Graphite and silicon carbide coated susceptor
- Rough vacuum pump & turbo pump
- Automatic pressure control with throttle valve
- Fast cooling system, Selenization kits
Integration
Compatibility with Automation & Robotics
APPLICATION
Rapid thermal annealing (RTA)
Selenization & Sulfurization
Rapid Thermal Oxidation (RTO)
Diffusion
Ohmic contact annealing
Crystallization & Densification
INDUSTRY
SEMI
Optoelectronic
Microelectronics
MEMS
PV
MATERIAL
Silicon
Steel
Glass
III-V
II-VI
