Features
Reactor technology
Stainless steel cold wall process chamber
RTP heating system
Crossed-lamp IR Technology
Temperature range
Up to 1250°C
Temperature uniformity (typical)
±1°C
Ramp rate
1°C/s to 250°C/s on 2-inch substrates
Temperature control
TCs & digital PID
Cooling rate
Up to 100°C/s
Process
Atmosphere to 10-6 Torr
Substrate size
Up to 3-inch wafers
Options
- Graphite and silicon carbide coated susceptor
- Rough vacuum pump & turbo pump
- Pyrometer temperature control
- Downstream pressure control with throttle valve
Robotic Integration
Compatibility with Automation : an offer by ECM Robotics
APPLICATION
Rapid thermal processing (RTP)
RTA
RTO
RTN
Crystallization
Densification
Selenization
Carbonization
INDUSTRY
SEMI
Optoelectronic
Microelectronics
MEMS
PV
MATERIAL
Silicon
Steel
Glass
III-V
II-VI