Technical specifications
Reactor technology
Stainless steel cold wall process chamber
Temperature control
TCs & digital PID
RTP heating system
Crossed-lamp IR Technology
Cooling rate
Up to 100°C/s
Temperature range
Up to 1250°C
Process
Atmosphere to 10-6 Torr
Temperature uniformity (typical)
±1°C
Robotic integration
Compatibility with Automation & Robotics : with ECM Robotics
Ramp rate
1°C/s to 250°C/s on 2-inch substrates
Substrate size
Up to 3-inch wafers
Options
- Graphite and silicon carbide coated susceptor
- Rough vacuum pump & turbo pump
- Pyrometer temperature control
- Downstream pressure control with throttle valve
Industry
- Semiconductor
- Optoelectronic
- Microelectronics
- MEMS
- Photovoltaic
Material
- Silicon
- Steel
- Glass
- III-V
- II-VI