Technical specifications
Equipment capabilities
Up to 210mm square wafers
Up to 8’’ Semiconductor round wafers
Flexible source material loading (powder, pellet, …)
Machine design
Easy maintenance system
Modular, Flexible & Compact footprint
CE Certification
Industry 4.0 compliant (supervision & robotization on demand)
Reactor design
Excellent process precision and repeatability
Ultra clean process conditions
9 heating zones
Internal PID temperature control
Embedded cooling system
Process flexibility
Vacuum & secondary vacuum capabilities (< 10-6mbar)
Fast heating and cooling
High temperature gradient (> 450°C)
Multizone lamp furnace ( 50°C < R < 700°C)
Substrate size
Round : 4’’ – 6’’ – 8’’
Square : 182mm – 210mm
Industry
- Medical
- Microelectronics
- Photovoltaics
- Optoelectronics
- Sensors
- Aeronautics
Material
- Silicon
- SiC
- GaN
- Sapphire
- Quartz
- Glass
- Metal
- III-V
- III-VI
- Superconductors
