Edge-defined film-fed growth (EFG)

ECM Lab Solutions offers crystal growth equipment that is capable of growing sapphire crystals using the Edge Defined Film Fed Crystal Growth (EFG) method. The standard heating method is inductive; however, it can also be equipped with Cyberstar resistive heating elements. Several sizes are available to meet with laboratories requirements as well as R&D centers.

Features

Various Crystal sizes up to 60 kg

Cyberstrar precise pulling head

Translation speed from 0.01 mm/h to 100 mm/h and in Fast mode up to 100 mm/min

Precise pressure regulation system

Equipped with quartz or sapphire window view ports

Resistive or inductive heating

Operating security loop system

Water cooled

working temperature in the reactor up to 2600 °C

Fully computerized heating process

Chamber capabilities for primary and secondary vacuum

Effective dimensions

400*60*6 (L*W*T)
600*150*6 (L*W*T)

Options

Weighing device up to 60 kg

Added crucible translation (manual or automatic)

Controlled mass flow of diffrent atmosphere gases

Integration

Possibility of automation

APPLICATION

Crystal Growth

INDUSTRY

PV
Defense

MATERIAL

SoG c-Si
Sapphire
Silicon

Related furnaces

Crystall Growth furnace

Czochralski puller

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