KYROPOULOS

Kyropoulos crystal growth machine

ECM Lab Solutions offers several Kyropoulos crystal growth furnaces varying in size and heating power. The heating technology can be inductive or resistive depending on the process requirements. The size of the crucible can reach up to 400mm diameter and a working temperature of 2300°C.

These machines are all equipped with the precise and stable Cyberstar pulling head having a conversion rate of 0.01 to 100 mm/h translation speed. Kyropoulos Crystal growth process is a top seeding melt growth method where the growth interface is constantly beneath the surface of the melt without any solid contact between the crystal and the crucible.

Known for its high quality, relatively large crystals, this method is characterized by a consistent low thermal gradient growth environment. It is commonly used for the growth of materials sensitive to mechanical and thermo-mechanical stress, which is usually difficult to obtain by other crystal growth methods.  The seed is dipped on the surface of the melt to allow the growth of the crystal inside.

Technical specifications

Features

  • Precise pressure regulation system
  • Equipped with quartz (or sapphire) window view ports
  • Operating security loop system
  • Chambre capabilities for primary and secondary vacuum
  • Various crystal sizes up to 100 Kg capability

Cyberstar precise pulling head

Translation speed from 0.01 mm/h to 100 mm/h and in fast mode up to 100 mm/min

Water cooled

Working temperature in the reactor up to 2600°C

Robotic integration

Robotic integration : with ECM Robotics

  • possibility to operate under high pressure
  • Weighing device up to 60 Kg
  • Added crucible translation (manual or automatic)
  • Controlled mass flow of different atmosphere gases
  • Medical Imagery
  • LED
  • PV
  • Solid Lasers
  • Sensors
  • Telecommunications
  • Defense
  • SoG c-Si
  • Sapphire
  • III-V
  • II-VI
  • Ge
  • Silicon
  • LSO
  • InSb

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