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SiC crystal growth furnace

SIC CRYSTAL GROWTH FURNACE (PVT METHOD)

PVT system for laboratory-scale silicon carbide crystal growth.

This SiC crystal growth furnace from ECM Lab Solutions uses the PVT (Physical Vapor Transport) method to grow silicon carbide single crystals in a research and development environment. This system is configured for process development, material qualification, and academic research, giving laboratories full control over sublimation parameters at a smaller, more accessible scale. Induction heating brings the growth chamber up to 2 500 °C, while a precision pulling head allows fine control of the crystal translation speed, from very slow research-grade growth to faster exploratory runs.

Technical specifications

Heating & Thermal control

  • Induction heating, water-cooled chamber
  • Working temperature up to 2 500 °C
  • Single or double quartz tube configuration
  • Temperature control : ± 1 °C

Atmosphere and pressure management

  • Controlled partial pressure of Nitrogen and/or inert gas.
  • Pressure regulation from 1 to 1 000 mbar

Safety

Operating security loop system.

Growth control

  • Precision pulling head, translation speed from 0.01 to 100 mm/h – Power control : ± 0.1 %
  • Fully computerized, software-monitored growth process

Robotic integration

Robotic integration : with ECM Robotics

4” / 6” / 8”

  • Research-oriented or pilot-production configuration
  • Integrated weighing system
  • Automation & software-controlled growth process
  • Movable platform: slow or fast translation speed

  • Semiconductor

  • Power electronics

  • Photovoltaics

  • Aerospace

     

  • SiC

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